| PART |
Description |
Maker |
| ECJ-2VB1H104K ECJ-2VB1H103K ERJ-8GEY0R00 ERJ-8GEYJ |
280W GaN WIDE-BAND PULSED POWER AMPLIFIER
|
RF Micro Devices
|
| ATC100A0R7BT ATC100A0R2BT ATC100A120JT ATC100A220J |
280W GaN WIDEBAND PULSED POWER
|
RF Micro Devices
|
| RF3932 |
GaN WIDE-BAND POWER AMPLIFIER
|
RF Micro Devices
|
| RFHA3942 |
35W GaN Wide-Band Power Amplifier
|
RF Micro Devices
|
| MAGX-000035-01000P-V2 MAGX-000035-01000P-15 |
GaN Wideband 10 W CW / Pulsed Transistor in Plastic Package
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
|
| MAGX-000040-00500P-15 MAGX-000040-00500P-V2 |
GaN Wideband 5 W CW / Pulsed Transistor in Plastic Package
|
M/A-COM Technology Solu...
|
| MAGX-003135-SB3PPR MAGX-003135-180L00 |
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| MSX025BADNC |
X-Band GaN SSPA
|
Teledyne Technologies I...
|
| TCS450 |
450 Watts, 45 Volts, Pulsed Avionics 1030 MHz
TCAS 1030 MHz, Class C, Common Base, Pulsed; P(out) (W): 450; P(in) (W): 100; Gain (dB): 6.5; Vcc (V): 45; Pulse Width (µsec): 32; Duty Cycle (%): 2; Case Style: 55KT-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
MICROSEMI POWER PRODUCTS GROUP
GHz Technology
Microsemi, Corp.
|
| SA5205AD SA5205AN NE5205AD NE5205AN NE5205A SA5205 |
Wide-band high-frequency amplifier 0 MHz - 600 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 1214-700P |
Pulsed Power L-Band (Si)
|
Microsemi
|
