| PART |
Description |
Maker |
| RF3932 |
GaN WIDE-BAND POWER AMPLIFIER
|
RF Micro Devices
|
| RF3933 |
GaN WIDE-BAND POWER AMPLIFIER
|
RF Micro Devices
|
| RFHA1000 |
15W GaN WIDE-BAND POWER AMPLIFIER
|
RF Micro Devices
|
| RFHA3942 |
35W GaN Wide-Band Power Amplifier
|
RF Micro Devices
|
| MAGX-000035-015000-V1 MAGX-000035-015000-15 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
|
| MAGX-003135-120L00 MAGX-003135-120L00-15 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solu...
|
| MAGX-001214-SB0PPR MAGX-001214-125L00 MAGX-001214- |
GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 1200-1400 MHz, 300μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| MSX025BADNC |
X-Band GaN SSPA
|
Teledyne Technologies I...
|
| TCS450 |
450 Watts, 45 Volts, Pulsed Avionics 1030 MHz
TCAS 1030 MHz, Class C, Common Base, Pulsed; P(out) (W): 450; P(in) (W): 100; Gain (dB): 6.5; Vcc (V): 45; Pulse Width (µsec): 32; Duty Cycle (%): 2; Case Style: 55KT-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
MICROSEMI POWER PRODUCTS GROUP
GHz Technology
Microsemi, Corp.
|
| 1214-700P |
Pulsed Power L-Band (Si)
|
Microsemi
|
| 2729-170 |
Pulsed Power S-Band (Si)
|
Microsemi
|
